Introduction
Brother Furnace high-temperature CVD furnace, working temperature from 300℃ to 1600℃. With a vacuum pump and gas mixing, our CVD tube furnace adopts an advanced temperature control system, high-temperature accuracy, excellent gas flow accuracy, easy operation, excellent heat-insulation effect, and symmetrical temperature uniformity. Mainly used for labs of universities, research centers, production enterprises, etc.
Features
● High-temperature operation:
CVD tube furnaces can provide a high-temperature environment and are suitable for many high-temperature deposition processes, including the growth of high-melting point materials.
● High Uniformity:
The design of the tube furnace helps achieve uniformity in the deposition process, ensuring a uniform film is formed across the entire substrate surface.
● Multi-material applicability:
CVD tube furnaces are widely suitable for the deposition of a variety of materials, including metals, oxides, nitrides, carbides, etc., making them widely used in semiconductors, optoelectronics, nanotechnology and other fields.
● Precision control:
Tube furnaces are usually equipped with advanced control systems to ensure precise control of parameters such as temperature, atmosphere and flow rate during the deposition process.
● Large-scale production:
Some CVD tube furnaces have high throughput and high production efficiency and are suitable for large-scale industrial production.
● Adjustable deposition rate:
The deposition rate can be controlled by adjusting reaction conditions to meet the requirements of different applications.
Applications
● Semiconductor manufacturing:
Used to grow insulating layers, conductor layers or semiconductor films on silicon wafers, which is a key process step in integrated circuit manufacturing.
● Optical coating:
Coating used to prepare the surface of optical components, such as anti-reflective coatings, mirrors, etc.
● Material modification:
CVD tube furnace can be used to change the properties of the material surface, such as surface coating, alloy deposition, etc.
● Nanotechnology:
Used to control the growth of materials at the nanoscale and prepare nanoparticles, nanowires, etc.
● Graphene growth:
Used to grow graphene films and is a common method for preparing graphene.
● Chemical vapor deposition:
used to deposit various functional films, such as barrier layers, conductive layers, etc.
product name | CVD chemical vapor deposition system |
---|---|
Product number | BR-CVD/PECVD |
slide | With slide, the furnace can be slid to achieve rapid heating or cooling function |
Heating zone length | 400mm single temperature zone/dual temperature zone |
Furnace tube size | Diameter 60x1200mm outer diameter x length |
Furnace tube material | High purity quartz tube |
Operating temperature | ≤1100℃ |
Temperature Control System | Artificial intelligence PID instrument, automatic temperature control |
Temperature control accuracy | ±1℃ (with over-temperature and couple-off alarm functions) |
Heating rate | Recommended 0~10℃/min |
Heating element | High quality resistance wire |
Vacuum system | |
Rated voltage | Single phase 220V 50Hz |
Passable gas | Inert gases such as nitrogen and argon |
Temperature measuring element | Thermocouple temperature measurement |
Shell structure | Double-layer shell structure with air cooling system |
vacuum flange | It has an air inlet and a pressure control valve, pneumatic pressure relief valve and air release valve at the other end. |
Air supply system | Four-way precision proton flow meter, adjust gas flow through touch screen |
Vacuum system | Rotary vane pump, the vacuum degree can reach 1pa in the cold state of the empty furnace. Vacuum gauge: Imported digital display vacuum gauge displays the vacuum degree in real time with high accuracy. |
Gas dosing system | The overall pressure range can be controlled -20kpa to 20kpa (relative pressure) |
Rated voltage | Single phase 220V 50Hz |
RF power supply (PECVD only) | |
Signal frequency | 13.56MHz±0.005% |
Power output range | 500W |
Maximum reflected power | 500W |
RF output interface | 50Ω,N-type,female |
Power stability | ±0.1% |
harmonic components | ≤-50dbc |
Supply voltage | Single-phase AC (187V-253V) frequency 50/60HZ |
Overall machine efficiency | >=70% |
Power Factor | >=90% |
cooling method | Forced air cooling |
model | Furnace tube diameter x heating zone length ( mm ) | Furnace tube length (mm) | Power ( kW ) | Maximum temperature (℃) | gas control | Vacuum degree (Pa) |
---|---|---|---|---|---|---|
BR-CVD-60 | Φ 60×400 | 1200 | 3 | 1200 | 3 way | 10Pa/7x10-3 |
BR-CVD-80 | Φ 80×400 | 1200 | 4 | 1200 | 3 way | 10Pa/7x10-3 |
BR-CVD-100 | Φ 80×400 | 1200 | 6 | 1200 | 3 way | 10Pa/7x10-3 |