products

CVD/PECVD Tube Furnace

CVD/PECVD Tube Furnace
  • Furnace Chamber:High purity quartz tube/high purity alumina tube
  • Heating Element:Resistance wire, silicon carbon rod, silicon molybdenum rod
  • Max Temperature:1200℃/1400℃/1600℃
  • Vacuum Level:high vacuum, low vacuum, none.
  • Temperature Accuracy:±1℃
  • Available Atmosphere:inert atmosphere (N2, CO2, Ar2, etc.)
  • Application Industry:Metal processing industry, semiconductor industry, ceramic industry, glass industry, chemical industry, aerospace and automotive industry, medical device manufacturing, etc.
PRODUCT DETAILS

Introduction

Brother Furnace's CVD/PECVD tube furnace is an advanced material synthesis equipment designed for chemical vapor deposition (CVD) processes widely used in semiconductors, optoelectronics, new materials, and surface coatings. Our CVD tube furnace excels in temperature control, gas management, and energy efficiency, and is designed to meet the requirements of high-performance and high-precision material production.

pecvd-cvd-tube-furnaceVapor-deposition-tube-furnaceVapor-deposition-furnace

Features

● Maximum temperature: 1200℃ (HRE resistance wire heating).

● Intelligent 50-segment programmable automatic control.

● Over-temperature protection function, automatic power off when the temperature exceeds the allowable set value.

● Safety protection: automatic power off when the furnace leaks electricity.

● Furnace shell structure, double-layer air-cooled structure; surface temperature is lower than 50℃.

● The furnace chamber adopts high-quality alumina polycrystalline fiber inorganic material formed by vacuum adsorption of Japanese technology, with excellent thermal insulation performance.

● 304 stainless steel KF quick-release sealing flange.

● Heating rate ≦20℃/min.

● Temperature control accuracy ±1℃.

High film deposition rate: RF glow technology greatly improves the deposition rate of the film, and the deposition rate can reach 10Å/S.

High uniformity over a large area: Advanced multi-point RF feed-in technology, special gas path distribution, and heating technology are adopted, so that the film uniformity index reaches 8%.

High consistency: Using the advanced design concept of the semiconductor industry, the deviation between each substrate deposited at one time is less than 2%.

High process stability: Highly stable equipment ensures the continuity and stability of the process.

● Standard direct-connected vacuum pump, the ultimate vacuum degree can reach 10Pa.

Application Areas

Semiconductor material preparation
Photoelectric material synthesis
New coating research and development
Nanomaterial preparation
Material science research
Thin film deposition

Thin Film Deposition

Technical Parameters

CVD chemical vapor deposition system
Product number BR-CVD/PECVD
slide With a slide, the furnace can be slid to achieve rapid heating or cooling function
Heating zone length 400mm single temperature zone/dual temperature zone
Furnace tube size Diameter 60x1200mm outer diameter x length
Furnace tube material High-purity quartz tube
Operating temperature ≤1100℃
Temperature Control System Artificial intelligence PID instrument, automatic temperature control
Temperature control accuracy ±1℃ (with over-temperature and couple-off alarm functions)
Heating rate Recommended 0~10℃/min
Heating element High-quality resistance wire
Vacuum system
Rated voltage Single phase 220V 50Hz
Passable gas Inert gases such as nitrogen and argon
Temperature measuring element Thermocouple temperature measurement
Shell structure Double-layer shell structure with air cooling system
vacuum flange It has an air inlet and a pressure control valve, pneumatic pressure relief valve and air release valve at the other end.
Air supply system Four-way precision proton flow meter, adjust gas flow through touch screen
Vacuum system Rotary vane pump, the vacuum degree can reach 1pa in the cold state of the empty furnace. Vacuum gauge: Imported digital display vacuum gauge displays the vacuum degree in real time with high accuracy.
Gas dosing system The overall pressure range can be controlled -20kpa to 20kpa (relative pressure)
Rated voltage Single phase 220V 50Hz
RF power supply (PECVD only)
Signal frequency 13.56MHz±0.005%
Power output range 500W
Maximum reflected power 500W
RF output interface 50Ω, N-type, female
Power stability ±0.1%
harmonic components ≤-50dbc
Supply voltage Single-phase AC (187V-253V) frequency 50/60HZ
Overall machine efficiency >=70%
Power Factor >=90%
cooling method Forced air cooling

model

Furnace tube diameter x heating zone length ( mm )

Furnace tube length (mm)

Power ( kW )

Maximum temperature (℃)

gas control

Vacuum degree (Pa)

BR-CVD-60

Φ 60×400

1200

3

1200

3 way

10Pa/7x10-3

BR-CVD-80

Φ 80×400

1200

4

1200

3 way

10Pa/7x10-3

BR-CVD-100

Φ 80×400

1200

6

1200

3 way

10Pa/7x10-3

model

Furnace tube diameter x heating zone length mm

Power ( kW )

Maximum temperature Maximum temperature (℃)

RF power supply

gas control

Vacuum degree (Pa)

frequency

power

BR-PECVD-60

Φ 60×450

4

1200

13.56MHz±0.005%

300-500W

3 way

10Pa/7x10-3

BR-PECVD-80

Φ 80×450

5

1200

3 way

10Pa/7x10-3

BR-PECVD-100

Φ 100×450

7

1200

3 way

10Pa/7x10-3

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